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[会议论文]

Unequally valued emitter ballasting resistors optimum design of multi-finger power GeSi HBTs

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Author:

Qiu, Jianjun (Qiu, Jianjun.) | Zhang, Wanrong (Zhang, Wanrong.) | Jin, Dongyue (Jin, Dongyue.) | Unfold

Indexed by:

EI

Abstract:

Multi-finger structure is commonly used in microwave power GeSi HBTs (Heterojunction Bipolar Transistors). Usually equally valued emitter ballasting resistors are added to improve thermal stability of the devices. However, self-heating and thermal coupling effects make the temperature distribution on emitter fingers non-uniform, so the equally valued ballasting resistors structure is not optimum. In this paper, an unequally valued ballasting resistors structure is presented, which could improve the uniformity of devices' temperature distribution effectively, and decrease the highest temperature to a certain extent.

Keyword:

Si-Ge alloys Resistors Heterojunction bipolar transistors Temperature distribution Heterojunctions Structural optimization Thermodynamic stability

Author Community:

  • [ 1 ] [Qiu, Jianjun]School of Electronics Information and Control Engineering, Beijing University of Technology, Beijing, 100022, China
  • [ 2 ] [Zhang, Wanrong]School of Electronics Information and Control Engineering, Beijing University of Technology, Beijing, 100022, China
  • [ 3 ] [Jin, Dongyue]School of Electronics Information and Control Engineering, Beijing University of Technology, Beijing, 100022, China
  • [ 4 ] [Yang, Jingwei]School of Electronics Information and Control Engineering, Beijing University of Technology, Beijing, 100022, China
  • [ 5 ] [Gao, Pan]School of Electronics Information and Control Engineering, Beijing University of Technology, Beijing, 100022, China
  • [ 6 ] [Liu, Ying]School of Electronics Information and Control Engineering, Beijing University of Technology, Beijing, 100022, China

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Source :

Year: 2006

Page: 890-893

Language: English

Cited Count:

WoS CC Cited Count: 0

30 Days PV: 3

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