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Author:

Amina (Amina.) | Ji, Lingfei (Ji, Lingfei.) (Scholars:季凌飞) | Yan, Tianyang (Yan, Tianyang.) | Ma, Rui (Ma, Rui.)

Indexed by:

SCIE

Abstract:

Currently, laser-induced structural modifications in optical materials have been an active field of research. In this paper, we reported structural modifications in the bulk of sapphire due to picosecond (ps) laser filamentation and analyzed the ionization dynamics of the filamentation. Numerical simulations uncovered that the high-intensity ps laser pulses generate plasma through multi-photon and avalanche ionizations that leads to the creation of two distinct types of structural changes in the material. The experimental bulk modifications consist of a void like structures surrounded by cracks which are followed by a submicrometer filamentary track. By increasing laser energy, the length of the damage and filamentary track appeared to increase. In addition, the transverse diameter of the damage zone increased due to the electron plasma produced by avalanche ionizations, but no increase in the filamentary zone diameter was observed with increasing laser energy.

Keyword:

filamentation structural modifications ionization dynamics sapphire picosecond laser

Author Community:

  • [ 1 ] [Amina]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Ji, Lingfei]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Yan, Tianyang]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Ma, Rui]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Amina]Minist Educ, Key Lab Trans Scale Laser Mfg Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Ji, Lingfei]Minist Educ, Key Lab Trans Scale Laser Mfg Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Yan, Tianyang]Minist Educ, Key Lab Trans Scale Laser Mfg Technol, Beijing 100124, Peoples R China
  • [ 8 ] [Ma, Rui]Minist Educ, Key Lab Trans Scale Laser Mfg Technol, Beijing 100124, Peoples R China

Reprint Author's Address:

  • 季凌飞

    [Ji, Lingfei]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China;;[Ji, Lingfei]Minist Educ, Key Lab Trans Scale Laser Mfg Technol, Beijing 100124, Peoples R China

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Source :

OPTO-ELECTRONIC ADVANCES

Year: 2019

Issue: 8

Volume: 2

1 4 . 1 0 0

JCR@2022

Cited Count:

WoS CC Cited Count: 23

SCOPUS Cited Count: 22

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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