The study of ZnO photoconductive UV detector - 文章详情页

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A　ZnO　photoconductive　UV　detector　was　fabricated　on　ZnO　film　grown　by　MOCVD　based　on　Al/Au　interdigital　electrode.　Nonalloyed　Al/Au　metallization　scheme　formed　good　ohmic　contact　on　n-type　ZnO.　The　dark　and　photoilluminated　currents　increased　linearly　with　bias　voltage.　The　cutoff　wavelength　of　the　detector　was　368nm,　and　it　was　also　in　response　to　the　blue　and　green　light.　Electrical　and　photoresponsive　changes　of　the　ZnO　UV　detector　due　to　RF　sputter　deposition　of　Antireflection　coating　(AR)　were　also　studied.　©　2006　IEEE.

关键词：

Ohmic contacts Sputter deposition Photoconductivity Metallorganic chemical vapor deposition Film growth Ultraviolet detectors Zinc oxide

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[ 1 ] [Li, Ying]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Feng, Shi-Wei]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Sun, Jing-Ying]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Xie, Xue-Song]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Yang, Ji]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Zhang, Yue-Zong]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Lu, Yi-Cheng]Department of Computer and Electrical Eng., Rutgers University, 94 Brett Road, Piscataway, NJ 08854, United States

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