The design of SiGe HBT direct-coupled LNA - 文章详情页

作者：

Weiming, Yang (Weiming, Yang.) | Jianxin, Chen (Jianxin, Chen.) | Wanbo, Xie (Wanbo, Xie.) | Chen, Shi (Chen, Shi.)

收录：

EI Scopus

摘要：

A　direct-coupled　low　noise　amplifier　was　designed　and　fabricated　on　a　Teflon　substrate,　using　packaged　SiGe　HBTs　BFP420　and　chip　type　passive　components.　This　SiGe　LNA　has　the　advantages　such　as　the　wide　bandwidth　(2.5GHz),　the　low　noise　figure　(NF　&le　2.23dB),　the　high　power　gain　(S21　≥　26.7dB),　the　input　and　output　VSWR　are　all　less　than　2.　The　design　principle　and　technology　features　of　the　broadband　amplifier　was　described.　The　computer　simulated　results　were　coincident　with　that　of　the　test.　©　2005　IEEE.

关键词：

Heterojunction bipolar transistors Bandwidth Logic design Broadband amplifiers Semiconducting silicon compounds Computer simulation

作者机构：

[ 1 ] [Weiming, Yang]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Jianxin, Chen]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Wanbo, Xie]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Chen, Shi]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China

通讯作者信息：

电子邮件地址：

ywmwy@emails.bjut.edu.cn

查看成果更多字段

成果类型
所属机构

所有年份指定年份从至