The microwave performances of SiGe/Si HBT based on the high resistivity substrate - 文章详情页

作者：

Yang, Weiming (Yang, Weiming.) | Shi, Chen (Shi, Chen.) | Gao, Mingjie (Gao, Mingjie.) | Li, Zhenguo (Li, Zhenguo.) | Chen, Jianxin (Chen, Jianxin.)

收录：

EI Scopus

摘要：

The　sample　of　SiGe　HBT　based　on　the　high　resistivity　substrate　of　1000ω-cm　was　fabricated　in　a　3μm　manufacture　process　line.　After　the　structure　and　fabrication　procedure　of　the　device　were　introduced,　the　influence　of　the　substrate　on　the　microwave　performances　was　analyzed　basing　on　its　high　frequency　equivalent　circuit　model.　Then　the　fT,　fmax　and　the　minimum　noise　figure　of　the　sample　were　tested　and　compared　to　the　one　based　on　the　conventional　N+　substrate.　The　results　indicate　that　the　fT　and　the　fmax　of　the　former　are　4GHz　and　2GHz　larger　than　that　of　the　latter　respectively.　In　the　meantime,　the　minimum　noise　figures　have　almost　not　been　deteriorated.　©　2005　IEEE.

关键词：

Electric conductivity Heterojunction bipolar transistors Microwaves Silicon compounds

作者机构：

[ 1 ] [Yang, Weiming]Beijing Optoelectronics Technology Lab., Beijing University of Technology, Beijing 100022, China
[ 2 ] [Shi, Chen]Beijing Optoelectronics Technology Lab., Beijing University of Technology, Beijing 100022, China
[ 3 ] [Gao, Mingjie]Beijing Optoelectronics Technology Lab., Beijing University of Technology, Beijing 100022, China
[ 4 ] [Li, Zhenguo]Beijing Optoelectronics Technology Lab., Beijing University of Technology, Beijing 100022, China
[ 5 ] [Chen, Jianxin]Beijing Optoelectronics Technology Lab., Beijing University of Technology, Beijing 100022, China

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电子邮件地址：

ywmwy@emails.bjut.edu.cn

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