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[会议论文]

Comparison the gain characteristic of AlInGaAs/AIGaAs and GaAs/AlGaAs quantum wells

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作者:

Hongxing, Gai (Hongxing, Gai.) | Jun, Deng (Jun, Deng.) | Jianjun, Li (Jianjun, Li.) | 展开

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EI Scopus

摘要:

According to the Harrison's model, the level change of conduction and valence bands caused by the strain of AlInGaAs/AlGaAs quantum well (QW) was analyzed firstly. The energy level of the electron and hole in the AlInGaAs/AlGaAs strained and GaAs/AlGaAs unstrained QW were calculated, respectively. In addition, taking the lorentzian function, the linear gain of the two QWs were calculated and discussed. Contrast the gain performance of GaAs/AlGaAs QW with that of AlyInxGa1-x-yAs/ AlGaAs QW, it can be found that the strained AlyInxGa 1-x-yAs/AlGaAs QW material has more promising optical gain than that of the GaAs/AlGaAs QW. © 2005 Trans Tech Publications, Switzerland.

关键词:

Semiconducting gallium arsenide Schematic diagrams Interpolation Heterojunctions Photons Functions Energy gap Semiconductor quantum wells Linearization Fermi level Gain measurement Aluminum alloys

作者机构:

  • [ 1 ] [Hongxing, Gai]Dept.of Electrical Engineering, Beijing Opto-Electron. Technol. Lab, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Jun, Deng]Dept.of Electrical Engineering, Beijing Opto-Electron. Technol. Lab, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Jianjun, Li]Dept.of Electrical Engineering, Beijing Opto-Electron. Technol. Lab, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Guangdi, Shen]Dept.of Electrical Engineering, Beijing Opto-Electron. Technol. Lab, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Jianxin, Chen]Dept.of Electrical Engineering, Beijing Opto-Electron. Technol. Lab, Beijing University of Technology, Beijing 100022, China

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来源 :

ISSN: 0255-5476

年份: 2005

期: III

卷: 475-479

页码: 1685-1688

语种: 英文

JCR分区:4

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WoS核心集被引频次: 0

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