Comparison the gain characteristic of AlInGaAs/AIGaAs and GaAs/AlGaAs quantum wells - 文章详情页

作者：

Hongxing, Gai (Hongxing, Gai.) | Jun, Deng (Jun, Deng.) | Jianjun, Li (Jianjun, Li.) | Guangdi, Shen (Guangdi, Shen.) | Jianxin, Chen (Jianxin, Chen.)

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EI Scopus

摘要：

According　to　the　Harrison＇s　model,　the　level　change　of　conduction　and　valence　bands　caused　by　the　strain　of　AlInGaAs/AlGaAs　quantum　well　(QW)　was　analyzed　firstly.　The　energy　level　of　the　electron　and　hole　in　the　AlInGaAs/AlGaAs　strained　and　GaAs/AlGaAs　unstrained　QW　were　calculated,　respectively.　In　addition,　taking　the　lorentzian　function,　the　linear　gain　of　the　two　QWs　were　calculated　and　discussed.　Contrast　the　gain　performance　of　GaAs/AlGaAs　QW　with　that　of　AlyInxGa1-x-yAs/　AlGaAs　QW,　it　can　be　found　that　the　strained　AlyInxGa　1-x-yAs/AlGaAs　QW　material　has　more　promising　optical　gain　than　that　of　the　GaAs/AlGaAs　QW.　©　2005　Trans　Tech　Publications,　Switzerland.

关键词：

Semiconducting gallium arsenide Schematic diagrams Interpolation Heterojunctions Photons Functions Energy gap Semiconductor quantum wells Linearization Fermi level Gain measurement Aluminum alloys

作者机构：

[ 1 ] [Hongxing, Gai]Dept.of Electrical Engineering, Beijing Opto-Electron. Technol. Lab, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Jun, Deng]Dept.of Electrical Engineering, Beijing Opto-Electron. Technol. Lab, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Jianjun, Li]Dept.of Electrical Engineering, Beijing Opto-Electron. Technol. Lab, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Guangdi, Shen]Dept.of Electrical Engineering, Beijing Opto-Electron. Technol. Lab, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Jianxin, Chen]Dept.of Electrical Engineering, Beijing Opto-Electron. Technol. Lab, Beijing University of Technology, Beijing 100022, China

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