Growth rate of a-Si:H film influenced by magnetic field gradient in MWECR CVD plasma system - 文章详情页

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EI Scopus

摘要：

In　this　paper　the　magnetic　field　profiles,　which　were　produced　by　three　ways　in　the　deposition　chamber　and　plasma　chamber　of　single　coil　divergent　field　microwave　electronic　circle　resonance　chemistry　vapor　deposition　(MWECR　CVD)　system,　was　investigated.　Then　the　magnetic　field　gradient　of　these　magnetic　field　profiles　was　obtained　quantitatively　by　using　Lorentz　fit.　The　results　indicated　that　the　gradient　value　of　the　magnetic　field　profile　nearby　the　substrate,　which　was　produced　by　a　coil　current　with　137.7A　if　a　SmCo　permanent　magnet　was　equipped　below　the　substrate　holder,　is　the　largest,　and　the　highest　deposition　rate　of　the　hydrogenated　amorphous　silicon　(a-Si:H)　film　was　observed　in　this　condition.　©2004　IEEE.

关键词：

Amorphous films Amorphous silicon Chemical vapor deposition Electric coils Growth (materials) Magnetic fields Permanent magnets Plasma density Plasmas Substrates

作者机构：

[ 1 ] [Yuehui, Hu]Department of Material Science and Engineering, Beijing University of Technology, China
[ 2 ] [Yuehui, Hu]Jingdezhen Ceramic Institute, China
[ 3 ] [Guanghua, Chen]Department of Material Science and Engineering, Beijing University of Technology, China
[ 4 ] [Guanghua, Chen]Jingdezhen Ceramic Institute, China
[ 5 ] [Xiuhong, Zhu]Department of Material Science and Engineering, Beijing University of Technology, China
[ 6 ] [Yandong, Rong]Department of Material Science and Engineering, Beijing University of Technology, China
[ 7 ] [Zhuo, Gao]Department of Material Science and Engineering, Beijing University of Technology, China
[ 8 ] [Ying, Li]Department of Material Science and Engineering, Beijing University of Technology, China
[ 9 ] [Huaien, Zhou]Department of Material Science and Engineering, Beijing University of Technology, China

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电子邮件地址：

ghchen@bjut.edu.cn

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