Simulation of the temperature injection PHEMT - 文章详情页

作者：

SongDi (SongDi.) | Lu, Chang-Zhi (Lu, Chang-Zhi.) | Cai, Xiao-Dan (Cai, Xiao-Dan.)

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EI Scopus

摘要：

A　new　microwave　device　model　is　brought　out　and　simulated,　which　is　called　TI-PHEMT.　The　maximum　extrinsic　transconductance　at　high　temperature　increases　significantly　and　therefore　the　microwave　performance　of　HEMT　at　high　temperature　is　increased　A　new　concept　＇Temperature　Injection＇　is　put　forward　to　explain　the　reason.　©2004　IEEE.

关键词：

Computer simulation Electric conductance High electron mobility transistors Mathematical models Microwave devices

作者机构：

[ 1 ] [SongDi]School of Elec. Inf. and Auto, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Lu, Chang-Zhi]School of Elec. Inf. and Auto, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Cai, Xiao-Dan]School of Elec. Inf. and Auto, Beijing University of Technology, Beijing 100022, China

通讯作者信息：

[songdi]school of elec. inf. and auto, beijing university of technology, beijing 100022, china

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