The temperature characteristics of AlGaN/GaN double heterostructure HEMT's - 文章详情页

作者：

收录：

EI Scopus

摘要：

AlGaN/OaN　double　heterostructure　high　electron　mobility　transistor　(DH-HEMT＇s)　with　a　2.0μm　gate　length　and　a　4μm　channel　length　exhibiting　good　temperature　characteristics　has　been　demonstrated.　The　maximum　drain　current　Ids　and　extrinsic　transconductance　Gm　are　1300mA/mm　235mS/mm,　850mA/mm　174mS/mm　and　475mA/mm　95mS/mm,　respectively　at　T=-194°C,　20°C　and　400°C.　The　temperature　coefficient　of　I　ds　and　Gm　are　-1.4mA/°C　and　-0.24mS/°C　respectively.　©　2004　IEEE.

关键词：

Electric currents Electric potential Gates (transistor) Heterojunctions High electron mobility transistors Molecular beam epitaxy Photoresistors Semiconducting aluminum compounds Thermal conductivity Transconductance

作者机构：

[ 1 ] [Lu, Changzhi]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Feng, Shiwei]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Wang, Dongfeng]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Zhu, Xiudian]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Fan, Zhifang]Department of Electric, Computer Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
[ 6 ] [Morkoc, Hadis]Virginia Microelectronics Center, Virginia Commonwealth University, Richmond, VA 23284-3072

通讯作者信息：

电子邮件地址：

chzhlu@bjut.edu.cn

查看成果更多字段

成果类型
所属机构

所有年份指定年份从至