Influence of InP cap layer on photo-responsivity of InP/InGaAs PIN detector - 文章详情页

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摘要：

The　InP　cap　layer　plays　a　significant　role　towards　improving　the　performance　of　the　InP/InGaAs　p-i-n　photodiode.　However,　the　measurements　and　simulation　confirm　that　it　also　induces　wavelength-dependent　absorption　losses　and　a　non-flat　photo-responsivity　curve　due　to　the　reflections　from　a　multilayer　structure.　©　2004　IEEE.

关键词：

Detectors Semiconducting indium gallium arsenide Quantum efficiency Computer simulation Reflection Semiconductor junctions Optical communication Photodiodes

作者机构：

[ 1 ] [Feng, Shiwei]School of Electronic Information and Auto Control, Beijing University of Technology, Pingleyuan 100, Chaoyang District, Beijing 100022
[ 2 ] [Lu, Changzhi]School of Electronic Information and Auto Control, Beijing University of Technology, Pingleyuan 100, Chaoyang District, Beijing 100022
[ 3 ] [Hu, Jun]Electrical and Computer Engineering Department, Rutgers University, Piscataway, NJ 08854-8058
[ 4 ] [Lu, Yicheng]Electrical and Computer Engineering Department, Rutgers University, Piscataway, NJ 08854-8058
[ 5 ] [Wynn, James D.]Princeton Optronics Inc., Princeton, NJ 08543
[ 6 ] [Ghosh, Chuni]Princeton Optronics Inc., Princeton, NJ 08543

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电子邮件地址：

shwfeng@bjut.edu.cn

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