Large　area　graphene　is　usually　grown　by　chemical　vapor　deposition　on　Cu　or　Ni　catalysts　at　similar　to　1000　degrees　C.　For　most　materials,　high　temperature　leads　to　high　quality.　However,　graphene　growth　at　even　higher　temperatures　is　rarely　reported.　Therefore,　here　we　systematically　investigate　the　graphene　deposition　on　refractory　metals　i.e.　metals　with　extremely　high　melting　points.　The　growth　parameters　and　material　characterizations　are　given　in　detail.　On　Ta　which　readily　forms　carbides　during　the　carbon　deposition,　the　growth　mode　is　monolayer　due　to　the　chemical　absorption　of　excess　carbon　in　the　bulk　metal.　On　Re,　there　is　no　carbide　formed　(except　in　extreme　conditions),　which　greatly　simplifies　the　scenario.　Because　of　the　relatively　high　carbon　solubility　in　Re,　the　growth　temperature　has　to　be　limited　in　order　not　to　drift　into　the　dominantly　multilayer　graphene　regime　caused　by　the　carbon　segregation.　Graphene　with　reasonable　quality　has　been　achieved,　although　not　as　good　as　expected.　For　example,　on　Ta,　the　residual　bonds　between　the　graphene　and　substrate　deteriorate　the　graphene　crystalline　quality.　Despite　the　difficulties　in　refractory　metal　etching,　the　transfer　technique　of　the　graphene　is　also　explored.　This　research　contributes　to　the　fundamental　understanding　of　the　graphene　growth　theory　and　technology　on　refractory　metals.