Design and Implementation of an Ultra-wide Band Variable Gain Amplifier Based on Dual Gain Control Technology [基于双重增益控制技术的超宽带可变增益放大器的设计与实现] - 文章详情页

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To　achieve　an　ultra-wide　band　variable　gain　amplifier　(UWB-VGA)　with　the　wide　gain　variable　range　and　a　good　gain　flatness　for　each　varied　gain　possible　in　the　UWB　frequency　band,　a　dual　gain　control　(DGC)　technology,　which　is　composed　of　an　amended　current　mirror　gain　control　structure　and　a　dynamic　signal　feedback　gain　control　structure,　was　proposed.　Based　on　the　proposed　DGC　technology,　an　ultra-wide　band　variable　gain　amplifier　for　3.0-6.0　GHz　band　was　designed.　Both　the　schematic　and　the　layout　of　the　UWB-VGA　were　completed.　Considering　the　parasitic　and　coupling　effects　of　the　layout,　device　structure　and　process,　package　generation　in　the　RF　band,　the　electromagnetic　co-simulation　of　schematic　and　layout　was　implemented　by　momentum　simulation　tools.　Results　show　that　by　adjusting　the　two　control　voltages　of　the　dual　gain　control　unit,　the　wide　variable　range　of　gain　and　good　gain　flatness　in　the　frequency　of　3.0-6.0　GHz　are　obtained.　The　gain　variation　range　gets　5.5　dB　and　the　gain　flatness　is　less　than　or　equal　to　±2.5　dB　for　every　variable　gain　when　the　dynamic　signal　feedback　gain　control　voltage　Vctrl_2　is　5.00　V　and　the　amended　current　mirror　gain　control　voltage　Vctrl_1　changes　from　2.50　V　to　3.20　V.　S11　and　S22　are　less　than　-10.0　dB,　and　the　input　and　output　match　well　in　the　frequency　of　3.0-6.0　GHz.　©　2019,　Editorial　Department　of　Journal　of　Beijing　University　of　Technology.　All　right　reserved.

关键词：

A dual gain control technology; Current mirror; Dynamic signal feedback; Electromagnetic co-simulation; Ultra wideband; Variable gain amplifier

作者机构：

[ 1 ] [Xie, H.]Microelectronics Institute, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Liu, R.]Microelectronics Institute, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Chen, Q.]Microelectronics Institute, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Wu, J.]Microelectronics Institute, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
[ 5 ] [Chen, L.]School of Physics and Electronic Engineering, Taishan University, Tai'an, Shandong 271000, China
[ 6 ] [Ma, P.]Microelectronics Institute, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
[ 7 ] [Gao, J.]Microelectronics Institute, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
[ 8 ] [Zhang, W.]Microelectronics Institute, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China

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