Cu-excess　Cu1+xAl1-xO2　(0≤x≤0.04)　thin　films　were　deposited　by　RF　magnetron　sputtering　technology　on　quartz　substrates　with　sintered　pure　phase　Cu1+xAl1-xO2　ceramics　as　targets.　The　influence　of　Cu　content　on　the　structural　and　optoelectronic　properties　of　the　films　was　investigated.　X-Ray　diffraction　(XRD)　results　reveal　that　all　annealed　films　have　a　pure　delafossite　phase(Cu1+xAl1-xO2).　The　average　transmittance　of　annealed　films　is　around　55%　in　the　visible　light　range,　and　average　transmittance　in　this　region　dose　not　influenced　by　Cu　content.　The　conductivity　of　annealed　films　increases　with　the　increasing　Cu　concentration,　and　the　highest　conductivity　reaches　1.22×10-2　S/cm　for　Cu1.04Al0.96O2　film　at　room　temperature.　The　temperature　dependence　of　conductivity　follows　the　Arrhenius　rule　in　the　range　of　200-300　K　for　all　annealed　samples,　it　indicates　that　the　electrical　conductivity　is　ascribe　to　thermal　activation.　©　2019,　Chinese　Ceramic　Society.　All　right　reserved.