Graphene　features　in　its　excellent　photoelectric　properties.　Therefore,　it　can　replace　the　traditional　ITO　material　as　a　transparent　conductive　layer　of　GaN-LED.　In　order　to　realize　the　industrial　production　of　the　above　applications,　the　direct　preparation　technology　of　graphene　on　GaN　surface　by　hot-wall　CVD　was　studied　and　the　growth　mechanism　was　explained.　The　results　demonstrate　that　the　optimal　conditions　for　direct　growth　were　growth　temperature　of　800　℃,　growth　time　of　60　min,　and　the　intrinsic　standoff　ratio　of　CH4　and　H2　are　1.59%　and　3.17%　respectively.　Under　this　condition,　multilayer　graphene　with　obvious　2D　peak　was　obtained.　The　low　temperature　growth　of　graphene　on　GaN　surface　was　studied　by　cold-wall　CVD.　The　corresponding　GaN-LED　was　produced　and　its　performance　was　tested.　Through　producing　and　testing　of　GaN-LEDs,　it　is　found　that　the　performance　of　the　device　was　significantly　reduced　when　the　growth　temperature　was　higher　than　700　℃.　This　research　plays　certain　significant　role　in　realizing　the　industrial　application　of　graphene　in　LED.　©　2019,　Chongqing　Functional　Materials　Periodical　Press　Co.　Ltd.　All　right　reserved.