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作者:

Yang, Heng Quan (Yang, Heng Quan.) | Chen, Yong Jin (Chen, Yong Jin.) | Wang, Xiao Yang (Wang, Xiao Yang.) | Miao, Lei (Miao, Lei.) | Li, Xiao Yan (Li, Xiao Yan.) | Han, Xiao Dong (Han, Xiao Dong.) (学者:韩晓东) | Lu, Xu (Lu, Xu.) | Wang, Guo Yu (Wang, Guo Yu.) | Zhou, Xiao Yuan (Zhou, Xiao Yuan.)

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EI Scopus SCIE

摘要:

The rational design and fabrication of nanostructures has become a fashionable strategy for pursing high thermoelectric performance in solid-state materials. Here we report nanostructured Te-Sb2Te3 composites with significantly enhanced thermoelectric performance through a scalable bottom-up method followed by a rapid sintering process. The power factor along with the carrier concentration could be significantly enhanced by increasing the number of point defects of Sb'(Te). Meanwhile, a great number of boundaries and hetero-interfaces between the Te and Sb2Te3 nanoparticles could play an important role in blocking phonons, resulting in the evident suppression of lattice thermal conductivity. Ultimately, a highest zT value close to 1.0 could be achieved at 623 K in samples with components of 2.6 mol% Sb2Te3 and 97.4 mol% Te. Such a peak zT value is comparable to that of doped Te materials synthesized by the conventional solid-state reaction process. This work reveals that high thermoelectric performance could be realized in an intentionally designed nanocomposite by synergistically improving the power factor and suppressing the lattice thermal conductivity.

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作者机构:

  • [ 1 ] [Yang, Heng Quan]Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
  • [ 2 ] [Lu, Xu]Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
  • [ 3 ] [Zhou, Xiao Yuan]Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
  • [ 4 ] [Chen, Yong Jin]Beijing Univ Technol, Beijing Key Lab, Beijing 100124, Peoples R China
  • [ 5 ] [Han, Xiao Dong]Beijing Univ Technol, Beijing Key Lab, Beijing 100124, Peoples R China
  • [ 6 ] [Chen, Yong Jin]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 7 ] [Han, Xiao Dong]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 8 ] [Wang, Xiao Yang]Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guilin 541004, Peoples R China
  • [ 9 ] [Miao, Lei]Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guilin 541004, Peoples R China
  • [ 10 ] [Li, Xiao Yan]Chongqing Jiaotong Univ, Dept Mat Sci & Engn, Chongqing 400074, Peoples R China
  • [ 11 ] [Wang, Guo Yu]Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
  • [ 12 ] [Wang, Guo Yu]Univ Chinese Acad Sci, Beijing 100049, Peoples R China

通讯作者信息:

  • [Zhou, Xiao Yuan]Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China;;[Miao, Lei]Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guilin 541004, Peoples R China;;[Wang, Guo Yu]Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China;;[Wang, Guo Yu]Univ Chinese Acad Sci, Beijing 100049, Peoples R China

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来源 :

CRYSTENGCOMM

ISSN: 1466-8033

年份: 2018

期: 47

卷: 20

页码: 7729-7738

3 . 1 0 0

JCR@2022

ESI学科: CHEMISTRY;

ESI高被引阀值:192

JCR分区:1

被引次数:

WoS核心集被引频次: 19

SCOPUS被引频次: 20

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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