Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature - 文章详情页

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摘要：

The　(001)　oriented　BiFeO3　thin　film　was　deposited　on　the　Nb:SrTiO3　substrate　by　radio　frequency　magnetron　sputtering　technology,　and　the　bipolar　resistive　switching　effect　was　observed　in　the　BiFeO3/Nb:　SrTiO3　heterostructure.　The　results　showed　that　the　ratio　between　the　high　resistance　and　low　resistance　was　more　than　two　orders　at　a　reading　pulse　of　-0.5　V　and　it　exhibited　excellent　retention　over　3600　s.　The　current　density-voltage　characteristic　was　dominated　by　the　space-charge-limited　conduction.　The　resistive　switching　effect　of　the　structure　was　attributed　to　the　trapping/detrapping　of　the　charge　carriers.

关键词：

BiFeO3 films bipolar resistive switching space-charge-limited conduction sputter

作者机构：

[ 1 ] [Wang Pengfei]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
[ 2 ] [Zhu Hui]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
[ 3 ] [Zhang Yingqiao]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
[ 4 ] [Feng Shiwei]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
[ 5 ] [Guo Chunsheng]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
[ 6 ] [Zhang Yamin]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
[ 7 ] [Meng Xiao]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
[ 8 ] [Qi Qiong]Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, Beijing 100083, Peoples R China

通讯作者信息：

[Zhu Hui]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China

电子邮件地址：

1191876552@qq.com |
zhuhui@bjut.edu.cn

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