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作者:

Liu, Hanli (Liu, Hanli.) | Sun, Zheng (Sun, Zheng.) | Tang, Dexian (Tang, Dexian.) | Huang, Hongye (Huang, Hongye.) | Kaneko, Tohru (Kaneko, Tohru.) | Chen, Zhijie (Chen, Zhijie.) | Deng, Wei (Deng, Wei.) | Wu, Rui (Wu, Rui.) | Okada, Kenichi (Okada, Kenichi.)

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摘要:

This paper presents a Bluetooth low-energy (BLE) transceiver (TRX) achieving ultra-low-power operation for Internet-of-Things (IoT) applications. The proposed TRX utilizes a wide-bandwidth low-power fractional-N digital phase-locked loop (DPLL) as a central component to perform multiple roles: a direct frequency modulator for the transmitter (TX), an analogto-digital converter (ADC) for the receiver (RX), a local oscillator for RX, and a frequency and phase synchronizer for the RX. The DPLL-based single-path downconversion method is adapted to halve the analog baseband circuit to further reduce the power consumption while maintaining a high interference rejection. A DPLL-based ADC with a digital-to-analog converter feedback greatly improves the ADC dynamic range, which improves the RX sensitivity and interference tolerance. By maximally reducing the required radio frequency and analog front-end components in RX, an RX power consumption of 2.3 mW is achieved with a -94 dBm sensitivity. The RX also satisfied all interference requirements with a certain margin. A 5.0-mW TX is achieved when delivering an output power of 0 dBm with a frequency-shift keying error of only 1.89%.

关键词:

ADPLL analog-to-digital converter (ADC) blocker Bluetooth low energy (BLE) delta sigma digital phase-locked loop (DPLL) digital-to-time converter (DTC) direct frequency-modulation direct frequency-modulation (DFM) fractional-N Gaussian frequency-shift keying (GFSK) hybrid loop IIP2 IIP3 interference low-noise amplifier (LNA) PLL sensitivity single-point modulation time-to-digital converter (TDC) transceiver (TRX) ultra-low power (ULP)

作者机构:

  • [ 1 ] [Liu, Hanli]Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan
  • [ 2 ] [Sun, Zheng]Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan
  • [ 3 ] [Tang, Dexian]Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan
  • [ 4 ] [Huang, Hongye]Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan
  • [ 5 ] [Kaneko, Tohru]Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan
  • [ 6 ] [Okada, Kenichi]Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan
  • [ 7 ] [Chen, Zhijie]Beijing Univ Technol, Fac Informat, Beijing 100124, Peoples R China
  • [ 8 ] [Deng, Wei]Apple Inc, Cupertino, CA 95014 USA
  • [ 9 ] [Wu, Rui]Chinese Acad Sci, Inst Elect, Beijing 100190, Peoples R China

通讯作者信息:

  • [Liu, Hanli]Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan

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来源 :

IEEE JOURNAL OF SOLID-STATE CIRCUITS

ISSN: 0018-9200

年份: 2018

期: 12

卷: 53

页码: 3672-3687

5 . 4 0 0

JCR@2022

ESI学科: ENGINEERING;

ESI高被引阀值:76

JCR分区:1

被引次数:

WoS核心集被引频次: 30

SCOPUS被引频次: 33

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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