The　impact　of　the　variations　of　threshold　voltage　(V-th)　and　hold　voltage　(V-hold)　of　threshold　switching　(TS)　selector　in　1S1R　crossbar　array　is　investigated.　Based　on　ON/OFF　state　I-V　curves　measurements　from　a　large　number　of　Ag-filament　TS　selectors,　V-th　and　V-hold　are　extracted　and　their　variations　distribution　expressions　are　obtained,　which　are　then　employed　to　evaluate　the　impact　on　read　process　and　write　process　in　32　x　32　1S1R　crossbar　array　under　different　bias　schemes.　The　results　indicate　that　V-th　and　V-hold　variations　of　TS　selector　can　lead　to　degradation　of　1S1R　array　performance　parameters,　such　as　minimum　read/write　voltage,　bit　error　rate　(BER),　and　power　consumption.　For　the　read　process,　a　small　V-hold　variation　not　only　results　in　the　minimum　read　voltage　increasing　but　it　also　leads　to　serious　degradation　of　BER.　As　the　standard　deviation　of　V-hold　and　V-th　increases,　the　BER　and　the　power　consumption　of　151R　crossbar　array　under　1/2　bias,　1/3　bias,　and　floating　scheme　degrade,　and　the　case　under　1/2　bias　tends　to　be　more　serious　compared　with　other　two　schemes.　For　the　write　process,　the　minimum　write　voltage　also　increases　with　the　variation　of　V-hold　from　small　to　large　value.　A　slight　increase　of　V-th　standard　deviation　not　only　decreases　write　power　efficiency　markedly　but　also　increases　write　power　consumption.　These　results　have　reference　significance　to　understand　the　voltage　variation　impacts　and　design　of　selector　properly.