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Surprisingly large strain plasticity has been demonstrated for ceramic SiC nanowires through in-situ deformation experiments near room temperature. This article reports a detailed electron energy-loss spectroscopy (EELS) study of deformation-induced localized plastic zones in a bent SiC nanowire. Both the red shift of the plasmon peak and the characteristic fine structure at Si L-edge absorption are consistent with local amorphisation of SiC. The recorded C K-edge fine structure is processed to remove the contribution from the surface amorphous carbon and the extracted C K-edge fine structure has no characteristic sp2-related pre-edge peak and hence is also consistent with amorphous SiC. These results suggest that the large strain plasticity in SiC nanowires is enabled by crystalline-to-amorphous transition. © 2008 IOP Publishing Ltd.
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Journal of Physics: Conference Series
ISSN: 1742-6588
Year: 2008
Volume: 126
Cited Count:
SCOPUS Cited Count: 5
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 0