Thermoelectric　(TE)　materials　have　received　extensive　attention　for　their　potential　applications　in　converting　various　kinds　of　heat　energy　into　electricity.　Bi　2　Te　3　and　its　alloys　are　known　to　be　the　best　TE　materials　at　near　room　temperature.　Bi　2　Te　3　materials　own　a　large　power　factor　and　a　low　thermal　conductivity.　It　is　found　that　the　ZT　value　could　be　significantly　improved　by　nanocomposite.　And　one　effective　way　to　increase　the　TE　properties　is　to　reduce　the　thermal　conductivity　by　incorporating　nano-sized　particles　into　the　matrix.　The　introduction　of　the　second　phase　by　nano　composite　can　effectively　improve　the　thermoelectric　properties　of　the　materials.　It　is　expected　that　the　dispersion　of　SiC　nano-particles　in　Bi　2　Te　3　could　reduce　the　thermal　conductivity　but　not　significantly　decrease　the　electrical　conductivity.　Bi　2　Te　3　ingots　have　poor　mechanical　properties　and　mechanical　alloying　(MA)　combine　the　powder　sintering　process　is　usually　used　to　improve　the　mechanical　properties　of　Bi　2　Te　3　-based　alloys.　N-type　nanocomposite　Bi　2　(Te　0.9　Se　0.1　)　3　/(SiC)　y　(0≤y≤0.02)　were　fabricated　by　MA　combined　with　spark　plasma　sintering　(SPS)　method　using　bismuth　powder,　tellurium　powder,　selenium　powder　and　nano　SiC　as　raw　materials.　The　effects　of　nano　SiC　on　phase　components,　microstructure,　and　the　thermoelectric　properties　were　systematically　investigated.　The　experimental　results　show　that　the　nanosized　SiC　particles　are　dispersed　in　the　grain　boundary　of　Bi　2　(Te　0.9　Se　0.1　)　3　matrix,　the　nano　composite　structure　of　which　can　significantly　reduce　the　lattice　thermal　conductivity　and　improve　the　performance　of　the　thermoelectric　material.　The　pattern　of　electrical　transport　is　n　conduction.　Meanwhile,　with　increasing　amount　of　SiC　doping,　the　resistivity　and　Seebeck　coefficient　were　enhanced,　and　the　samples　still　have　good　electrical　properties　at　near　the　room　temperature.　Nano　SiC　can　enhance　phonon　scattering　and　significantly　reduce　the　thermal　conductivity　due　to　its　diffuse　distribution　in　grain　boundary,　which　leads　to　a　higher　ZT　than　that　of　the　non-doped　samples.　The　dimensionless　figure　of　merit　ZT　was　improved　and　reaches　maximum　value　of　0.73　at　323　K　for　the　Bi　2　(Te　0.9　Se　0.1　)　3　/(SiC)　0.01　sample.　©　2018,　Chongqing　Functional　Materials　Periodical　Press　Co.　Ltd.　All　right　reserved.