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作者:

de Vries, Folkert K. (de Vries, Folkert K..) | Shen, Jie (Shen, Jie.) | Skolasinski, Rafal J. (Skolasinski, Rafal J..) | Nowak, Michal P. (Nowak, Michal P..) | Varjas, Daniel (Varjas, Daniel.) | Wang, Lin (Wang, Lin.) | Wimmer, Michael (Wimmer, Michael.) | Ridderbos, Joost (Ridderbos, Joost.) | Zwanenburg, Floris A. (Zwanenburg, Floris A..) | Li, Ang (Li, Ang.) (学者:李昂) | Koelling, Sebastian (Koelling, Sebastian.) | Verheijen, Marcel A. (Verheijen, Marcel A..) | Bakkers, Erik P. A. M. (Bakkers, Erik P. A. M..) | Kouwenhoven, Leo P. (Kouwenhoven, Leo P..)

收录:

SCIE

摘要:

Low dimensional semiconducting structures with strong spin-orbit interaction (SOI) and induced superconductivity attracted great interest in the search for topological superconductors. Both the strong SOI and hard superconducting gap are directly related to the topological protection of the predicted Majorana bound states. Here we explore the one-dimensional hole gas in germanium silicon (Ge-Si) core-shell nanowires (NWs) as a new material candidate for creating a topological superconductor. Fitting multiple Andreev reflection measurements shows that the NW has two transport channels only, underlining its one-dimensionality. Furthermore, we find anisotropy of the Lande g-factor that, combined with band structure calculations, provides us qualitative evidence for the direct Rashba SOI and a strong orbital effect of the magnetic field. Finally, a hard superconducting gap is found in the tunneling regime and the open regime, where we use the Kondo peak as a new tool to gauge the quality of the superconducting gap.

关键词:

nanowires Josephson junction Spin-orbit interaction g-factor anisotropy multiple Andreev reflection hole transport

作者机构:

  • [ 1 ] [de Vries, Folkert K.]Delft Univ Technol, QuTech, NL-2600 GA Delft, Netherlands
  • [ 2 ] [Shen, Jie]Delft Univ Technol, QuTech, NL-2600 GA Delft, Netherlands
  • [ 3 ] [Skolasinski, Rafal J.]Delft Univ Technol, QuTech, NL-2600 GA Delft, Netherlands
  • [ 4 ] [Varjas, Daniel]Delft Univ Technol, QuTech, NL-2600 GA Delft, Netherlands
  • [ 5 ] [Wang, Lin]Delft Univ Technol, QuTech, NL-2600 GA Delft, Netherlands
  • [ 6 ] [Wimmer, Michael]Delft Univ Technol, QuTech, NL-2600 GA Delft, Netherlands
  • [ 7 ] [Kouwenhoven, Leo P.]Delft Univ Technol, QuTech, NL-2600 GA Delft, Netherlands
  • [ 8 ] [de Vries, Folkert K.]Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands
  • [ 9 ] [Shen, Jie]Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands
  • [ 10 ] [Skolasinski, Rafal J.]Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands
  • [ 11 ] [Varjas, Daniel]Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands
  • [ 12 ] [Wang, Lin]Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands
  • [ 13 ] [Wimmer, Michael]Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands
  • [ 14 ] [Kouwenhoven, Leo P.]Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands
  • [ 15 ] [Nowak, Michal P.]AGH Univ Sci & Technol, Acad Ctr Mat & Nanotechnol, Al A Mickiewicza 30, PL-30059 Krakow, Poland
  • [ 16 ] [Ridderbos, Joost]Univ Twente, NanoElect Grp, MESA, NL-7500 AE Enschede, Netherlands
  • [ 17 ] [Zwanenburg, Floris A.]Univ Twente, NanoElect Grp, MESA, NL-7500 AE Enschede, Netherlands
  • [ 18 ] [Ridderbos, Joost]Univ Twente, Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
  • [ 19 ] [Zwanenburg, Floris A.]Univ Twente, Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
  • [ 20 ] [Li, Ang]Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
  • [ 21 ] [Koelling, Sebastian]Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
  • [ 22 ] [Verheijen, Marcel A.]Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
  • [ 23 ] [Bakkers, Erik P. A. M.]Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
  • [ 24 ] [Verheijen, Marcel A.]Philips Innovat Labs, NL-5656 AE Eindhoven, Netherlands
  • [ 25 ] [Kouwenhoven, Leo P.]Microsoft Stn Q Delft, NL-2600 GA Delft, Netherlands
  • [ 26 ] [Li, Ang]Beijing Univ Technol, Beijing Key Lab Microstruct & Property Adv Mat, Pingleyuan 100, Beijing 100024, Peoples R China

通讯作者信息:

  • [Shen, Jie]Delft Univ Technol, QuTech, NL-2600 GA Delft, Netherlands;;[Kouwenhoven, Leo P.]Delft Univ Technol, QuTech, NL-2600 GA Delft, Netherlands;;[Shen, Jie]Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands;;[Kouwenhoven, Leo P.]Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands;;[Kouwenhoven, Leo P.]Microsoft Stn Q Delft, NL-2600 GA Delft, Netherlands

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来源 :

NANO LETTERS

ISSN: 1530-6984

年份: 2018

期: 10

卷: 18

页码: 6483-6488

1 0 . 8 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:145

JCR分区:1

被引次数:

WoS核心集被引频次: 25

SCOPUS被引频次: 23

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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