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作者:

Wang, Yan (Wang, Yan.) | Liu, Feifei (Liu, Feifei.) | Zhang, Xinping (Zhang, Xinping.) (学者:张新平)

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摘要:

Plasmonic photonic nanostructuring on the end facets of optical fibers may enable extensive applications of the miniaturized devices in sensors. However, the small area on the fiber tips and the large aspect ratio of the fiber body largely restrict direct fabrication, which is apparently the challenge in most of the nanopatterning techniques. Therefore, efficient and easily applicable transfer techniques are more practical for fabricating plasmonic nanodevices on the fiber tips. In this study, we report the fabrication of plasmonic photonic structures on large-area planar substrates, flexibilization of the structures into thin films, and transfer of these films onto the end facets of optical fibers. This strategy enables high-quality functionalization of fiber tips by plasmonic photonic devices, thus providing new approaches for sensor applications.

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作者机构:

  • [ 1 ] [Wang, Yan]Beijing Univ Technol, Inst Informat Photon Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Liu, Feifei]Beijing Univ Technol, Inst Informat Photon Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Zhang, Xinping]Beijing Univ Technol, Inst Informat Photon Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Wang, Yan]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 5 ] [Liu, Feifei]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 6 ] [Zhang, Xinping]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 7 ] [Liu, Feifei]Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
  • [ 8 ] [Liu, Feifei]Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China

通讯作者信息:

  • 张新平

    [Zhang, Xinping]Beijing Univ Technol, Inst Informat Photon Technol, Beijing 100124, Peoples R China;;[Zhang, Xinping]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China

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来源 :

NANOSCALE

ISSN: 2040-3364

年份: 2018

期: 34

卷: 10

页码: 16193-16200

6 . 7 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:145

JCR分区:1

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