Chemical　vapor　deposited　graphene　suffers　from　two　problems:　transfer　from　metal　catalysts　to　insulators,　and　photoresist　induced　degradation　during　patterning.　Both　result　in　macroscopic　and　microscopic　damages　such　as　holes,　tears,　doping,　and　contamination,　translated　into　property　and　yield　dropping.　We　attempt　to　solve　the　problems　simultaneously.　A　nickel　thin　film　is　evaporated　on　SiO2　as　a　sacrificial　catalyst,　on　which　surface　graphene　is　grown.　A　polymer　(PMMA)　support　is　spin-coated　on　the　graphene.　During　the　Ni　wet　etching　process,　the　etchant　can　permeate　the　polymer,　making　the　etching　efficient.　The　PMMA/graphene　layer　is　fixed　on　the　substrate　by　controlling　the　surface　morphology　of　Ni　film　during　the　graphene　growth.　After　etching,　the　graphene　naturally　adheres　to　the　insulating　substrate.　By　using　this　method,　transfer-free,　lithography-free　and　fast　growth　of　graphene　realized.　The　whole　experiment　has　good　repeatability　and　controllability.　Compared　with　graphene　transfer　between　substrates,　here,　no　mechanical　manipulation　is　required,　leading　to　minimal　damage.　Due　to　the　presence　of　Ni,　the　graphene　quality　is　intrinsically　better　than　catalyst-free　growth.　The　Ni　thickness　and　growth　temperature　are　controlled　to　limit　the　number　of　layers　of　graphene.　The　technology　can　be　extended　to　grow　other　two-dimensional　materials　with　other　catalysts.