Silver　nanowire　(AgNW)　networks　have　been　demonstrated　to　exhibit　superior　transparent　and　conductive　performance　over　that　of　indium-doped　tin　oxide　(ITO)　and　have　been　proposed　to　replace　ITO,　which　is　currently　widely　used　in　optoelectronic　devices　despite　the　scarcity　of　indium　on　Earth.　In　this　paper,　the　current　spreading　and　enhanced　transmittance　induced　by　AgNWs,　which　are　two　important　factors　influencing　the　light　output　power,　were　analyzed.　The　enhanced　transmittance　was　studied　by　finite-difference　time-domain　simulation　and　verified　by　cathodoluminescence　measurements.　The　enhancement　ratio　of　the　light　output　power　decreased　as　the　GaP　layer　thickness　increased,　with　enhancement　ratio　values　of　79%,　52%,　and　15%　for　GaP　layer　thicknesses　of　0.5　mu　m,　1　mu　m,　and　8　mu　m,　respectively,　when　an　AgNW　network　was　included　in　AlGaInP　light-emitting　diodes.　This　was　because　of　the　decreased　current　distribution　tunability　of　the　AgNW　network　with　the　increase　of　the　GaP　layer　thickness.　The　large　enhancement　of　the　light　output　power　was　caused　by　the　AgNWs　increasing　carrier　spread　out　of　the　electrode　and　the　enhanced　transmittance　induced　by　the　plasmonic　AgNWs.　Further　decreasing　the　sheet　resistance　of　AgNW　networks　could　raise　their　light　output　power　enhancement　ratio.