The　Nb-doped　beta-Ga2O3　(beta-Ga2O3:Nb)　thin　films　have　been　deposited　on　the　p-Si　and　Au　nanoparticles　decorated　p-Si　substrates　by　radio　frequency　magnetron　technique　in　argon　ambient.　All　the　annealed　beta-Ga2O3:Nb　films　are　composed　of　similar　crystallite　sizes　obtained　by　XRD　and　SEM　measurements.　The　beta-Ga2O3:Nb　thin　film　grown　on　the　Au　nanoparticles　decorated　substrate　shows　lower　transmittance　and　narrower　band　gap　compared　to　that　of　grown　on　p-Si　reference　substrate.　Photoluminescence　intensity　was　quenched　because　of　the　short　separation　distance　between　semiconductor　and　the　Au　nanoparticles.　The　current　density　was　enhanced　and　the　barrier　height　of　the　beta-Ga2O3:Nb/p-Si　heterojunction　was　reduced　by　inserting　Au　nanoparticles　in　the　interface　of　beta-Ga2O3:Nb/p-Si　heterojunction.