Tunnel junction AlGaInP light emitting diode - 文章详情页

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摘要：

The　n-type　GaAs　substrates　are　used　and　their　conductive　type　is　changed　to　p-type　by　tunnel　junction　for　AlGaInP　light　emitting　diodes　(TJ-LED),　then　n-type,　the　effect　of　current　spreading　layer　is　enhanced　and　the　light　extraction　efficiency　is　increased　by　the　n-type　GaP　current　spreading　layer.　For　TJ-LED　with　3　μm　n-type　GaP　current　spreading　layer,　experimental　results　show　that　compared　with　conventional　LED　with　p-type　GaP　current　spreading　layer,　light　output　power　is　increased　for　50%　at　20　mA　and　for　66.7%　at　100　mA.

关键词：

AlGaInP; High brightness LED; MOCVD; Tunnel junction

作者机构：

[ 1 ] [Wang, G.]Inst. of Info., Beijing Polytech. Univ., Beijing 100022, China
[ 2 ] [Shen, G.]Inst. of Info., Beijing Polytech. Univ., Beijing 100022, China
[ 3 ] [Guo, X.]Inst. of Info., Beijing Polytech. Univ., Beijing 100022, China
[ 4 ] [Gao, G.]Inst. of Info., Beijing Polytech. Univ., Beijing 100022, China
[ 5 ] [Wei, X.]Inst. of Info., Beijing Polytech. Univ., Beijing 100022, China
[ 6 ] [Zhang, G.]Inst. of Info., Beijing Polytech. Univ., Beijing 100022, China
[ 7 ] [Ma, X.]Inst. of Info., Beijing Polytech. Univ., Beijing 100022, China
[ 8 ] [Li, Y.]Inst. of Info., Beijing Polytech. Univ., Beijing 100022, China
[ 9 ] [Chen, L.]Inst. of Info., Beijing Polytech. Univ., Beijing 100022, China

通讯作者信息：

[Wang, G.]Inst. of Info., Beijing Polytech. Univ., Beijing 100022, China

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