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Nanocrystalline diamond field emitters were deposited by microwave plasma-enhanced chemical vapor deposition using porous Si as host matrixes. Scanning electron microscopy observations showed that the nuclei of diamond occurred at the edges of the etched pores, and the nanoscale diamond grains were partly embedded into the pores of the porous Si. The structure was beneficial to the electron field emission. The electron emission became more stable and the emission current was significantly enhanced comparing with those of the diamond films deposited on Si substrates scratched by diamond powder.
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