Indexed by:
Abstract:
The β-SlC thin films were grown on Si(100) substrates by Cat-CVD. The effect of deposition gas pressures was systematically studied. The Fourier Transform Infrared Spectroscopy(FTIR) spectrum of the samples indicated that crystallized degree of the samples led in appearenee of a minimum. However, the deposition rate was increased with increasing of gas pressures basically. X-ray diffraction(XRD) pattern also testified the formation of /?-SiC in the thin films. Moreover, according to the formula of Debeye-Scherrer, the crystalline size for these thin films was estimated in nanometer-scale.
Keyword:
Reprint Author's Address:
Email:
Source :
Rare Metal Materials and Engineering
ISSN: 1002-185X
Year: 2001
Issue: SUPPL. 1
Volume: 30
Page: 645-
0 . 7 0 0
JCR@2022
ESI Discipline: MATERIALS SCIENCE;
JCR Journal Grade:3
Cited Count:
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 1