A　new　structure　IGBT,　named　Low　Power　Loss　IGBT　(LPL-IGBT)　is　proposed.　It　keeps　the　advantages　of　NPT-IGBTs　because　of　its　very　thin　and　lightly　doped　p-type　back　emitter　formed　by　ion　implantation.　Meanwhile,　it　also　takes　the　advantages　of　PT-IGBTs　due　to　its　n-type　buffer　layer　which　is　the　residual　layer　of　the　pre-diffused　n+　region　at　the　backside　of　the　n-　substrate.　Simulation　results　show　that　its　turn-off　power　loss　is　almost　a　half　of　that　of　the　PT-IGBT　or　NPT-IGBT.　Furthermore,　its　structure　is　more　suitable　for　practical　production　than　FSIGBT.