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作者:

Wu, Y. (Wu, Y..) | Lu, X.-H. (Lu, X.-H..) | Kang, B.-W. (Kang, B.-W..) | Wang, Z. (Wang, Z..) (学者:王湛) | Cheng, X. (Cheng, X..) | Gao, Y. (Gao, Y..)

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摘要:

A new structure IGBT, named Low Power Loss IGBT (LPL-IGBT) is proposed. It keeps the advantages of NPT-IGBTs because of its very thin and lightly doped p-type back emitter formed by ion implantation. Meanwhile, it also takes the advantages of PT-IGBTs due to its n-type buffer layer which is the residual layer of the pre-diffused n+ region at the backside of the n- substrate. Simulation results show that its turn-off power loss is almost a half of that of the PT-IGBT or NPT-IGBT. Furthermore, its structure is more suitable for practical production than FSIGBT.

关键词:

NPT-IGBT; On-state voltage; PT-IGBT; Turn-off power loss

作者机构:

  • [ 1 ] [Wu, Y.]Dept. of Electron. Sci. and Technol., Beijing Polytech. Univ., Beijing 100022, China
  • [ 2 ] [Lu, X.-H.]Dept. of Electron. Sci. and Technol., Beijing Polytech. Univ., Beijing 100022, China
  • [ 3 ] [Kang, B.-W.]Dept. of Electron. Sci. and Technol., Beijing Polytech. Univ., Beijing 100022, China
  • [ 4 ] [Wang, Z.]Dept. of Electron. Sci. and Technol., Beijing Polytech. Univ., Beijing 100022, China
  • [ 5 ] [Cheng, X.]Dept. of Electron. Sci. and Technol., Beijing Polytech. Univ., Beijing 100022, China
  • [ 6 ] [Gao, Y.]Dept. of Electron. Sci. and Technol., Beijing Polytech. Univ., Beijing 100022, China

通讯作者信息:

  • [Wu, Y.]Dept. of Electron. Sci. and Technol., Beijing Polytech. Univ., Beijing 100022, China

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来源 :

Chinese Journal of Semiconductors

ISSN: 0253-4177

年份: 2001

期: 12

卷: 22

页码: 1565-1571

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WoS核心集被引频次: 0

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ESI高被引论文在榜: 0 展开所有

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