β-SiC thin films grown by PECVD at low temperature - 文章详情页

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摘要：

β-SiC　thin　films　were　grown　on　Si(100)　using　PECVD　at　400°C-700°C.　The　structure　and　composition　of　the　samples　were　analyzed　by　FTIR　and　XRD.　The　influences　of　substrate　temperature　on　the　crystalline　degree　of　SiC　thin　films　in　certain　deposit　conditions　were　discussed　and　the　thin　films　with　perfect　crystalline　degree　at　600　°C　were　obtained.

关键词：

β-sic; PECVD; Sic thin films's

作者机构：

[ 1 ] [Wei, L.]Beijing Polytechnic University School, Beijing 100022, China
[ 2 ] [Mei, W.]Beijing Polytechnic University School, Beijing 100022, China
[ 3 ] [Hao, W.]Beijing Polytechnic University School, Beijing 100022, China
[ 4 ] [Bo, W.]Beijing Polytechnic University School, Beijing 100022, China
[ 5 ] [Hui, Y.]Beijing Institute of Technology Department, Beijing 100081, China
[ 6 ] [Bo, L.]Beijing Institute of Technology Department, Beijing 100081, China
[ 7 ] [Jingjing, W.]Beijing Institute of Technology Department, Beijing 100081, China

通讯作者信息：

[Wei, L.]Beijing Polytechnic University School, Beijing 100022, China

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