Uniformity　in　mass-fabrication　of　nanostructured　device　is　important　for　its　practical　application.　In　this　paper,　we　developed　a　step-corner　growth　mode　to　on-chip　fabricate　uniform　oblique-bridged　ZnO　nanowire　UV　sensor.　By　strictly　controlling　the　microelectronic　processing　including　photolithography　and　magnetron　sputtering　procedures　during　the　seed　layer　deposition　and　electrode　fabrication,　ZnO　NW　array　could　nucleate　at　the　upper　step-corner　of　the　seed　layer　due　to　the　high　catalytic　activities　at　the　surface　steps　and　kinks,　and　then　grow　in　a　distribution　of　circular　sector　to　form　an　oblique　bridging　configuration,　which　guaranteed　the　device　performance　and　uniformity　at　the　same　time.　For　the　within-chip　uniformity,　in　a　4　x　4　sensor　array　that　randomly　chosen　under　the　365　nm　UV　light　of　2.5　mW/cm(2)　and　at　the　bias　voltage　of　1　V,　the　light-to-dark　current　ratio　all　kept　in　the　level　of　10(6)　with　the　average　value　of　1.84　x　10(6).　There　were　75%　of　them　in　the　range　of　1.1　x　10(6)　similar　to　3　x　10(6).　The　detectivity　all　kept　in　the　level　of　10(15)　Jones　with　the　average　value　of　3.53　x　10(15)　Jones.　There　were　75%　of　them　in　the　range　of　2　x　10(15)　similar　to　4　x　10(15)　Jones.　For　the　chip-to-chip　uniformity,　in　12　packaged　devices　that　randomly　chosen　from　three　fabrication　lots,　the　light-to-dark　current　ratio　all　kept　in　the　level　of　10(6)　with　the　average　value　of　2.70　x　10(6).　There　were　75%　of　them　in　the　range　of　1　x　10(6)　similar　to　3　x　10(6).　The　detectivity　all　kept　in　the　level　of　10(15)　Jones　with　average　value　of　3.69　x　10(15)　Jones.　There　were　75%　of　them　in　the　range　of　1　x　10(15)　similar　to　4　x　10(15)　Jones.　The　uniformity　would　deteriorate　if　the　step　height　of　seed　layer　was　short,　because　NW　would　nucleate　at　the　lower　corner　of　the　step　and　difficult　to　form　the　oblique　bridge.　Fabrication　uniformity　was　also　influenced　by　the　step　exposure　degree,　the　compactness　of　the　seed　layer　and　the　flatness　of　the　substrate.