High frequency AC equivalent circuit model of Si/SiGe HBTs - 文章详情页

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In　applications　based　on　Si/SiGe　HBTs,　the　veracity　of　the　AC　equivalent　circuit　model　is　the　key　element　during　circuit　design.　To　avoid　errors　in　available　ranges　for　bipolar　devices　from　fβ　to　fT,　we　developed　a　novel　model　with　accurate　circuit　form　by　derivation　of　I-V　equations　and　circuit　descriptions　of　Y　and　H　type　AC　parameters.　The　novel　HBTs＇　model　represents　ΔEg　between　two　sides　of　heterojunction,　and　legible　differences　with　BJTs　in　capacitance　proportion　caused　by　decreasement　of　emitter　base　doping　rate　and　in　the　ratio　to　capacitance　and　resistance　by　the　reduction　of　base　width.　Results　of　these　differences　make　the　novel　model＇s　circuit　form　varies　from　BJTs＇　in　high　frequency　ranges.　©　2001　IEEE.

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Equivalent circuit model; Si/SiGe HBTs

作者机构：

[ 1 ] [Shi, C.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
[ 2 ] [Zou, D.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
[ 3 ] [Xu, C.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
[ 4 ] [Chen, J.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
[ 5 ] [Niu, Y.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
[ 6 ] [Shen, G.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China

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