Influences of various dielectrics materials on p++ silicon diaphragm - 文章详情页

作者：

收录：

Scopus

摘要：

Effects　of　various　dielectric　materials　on　thermal　stress　in　p++　silicon　diaphragm　were　analyzed.　In　this　work　the　modeling　of　thin　film　deposition　based　on　the　finite　element　analysis　(FEA)　is　described.　The　theoretical　results　predict　the　change　of　mechanical　performance　when　various　dielectric　materials　were　deposited　on　p++　silicon　diaphragm.　©　2001　IEEE.

关键词：

作者机构：

[ 1 ] [Wu, J.]Electronic Engineering Department, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China
[ 2 ] [Zou, D.]Electronic Engineering Department, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China
[ 3 ] [Gao, G.]Electronic Engineering Department, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China
[ 4 ] [Li, L.]Electronic Engineering Department, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China
[ 5 ] [Niu, N.]Electronic Engineering Department, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China
[ 6 ] [Shen, G.]Electronic Engineering Department, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China

通讯作者信息：

电子邮件地址：

查看成果更多字段

成果类型
所属机构

所有年份指定年份从至