Analysis of the operating point of a novel multiple-active-region tunneling-regenerated vertical-cavity surface-emitting laser - Details

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A　novel　multiple-active-region　tunneling-regenerated　vertical-cavity　surface-emitting　laser　(VCSEL)　with　a　greater-than-unity　differential　quantum　efficiency　is　proposed.　This　novel　VCSEL　is　expected　to　have　an　improved　performance,　specifically,　reduced　threshold　current　and　heightened　output　power.　The　optimum　reflectivity　in　terms　of　output　power　is　determined　for　this　novel　VCSELs　with　fixed　supply　current　and　series　resistance　as　a　parameter.　We　compare　the　output　power　of　the　novel　structure　with　that　of　the　traditional　structure　at　the　same　reflectivity　and　injected　current.　Also,　we　compare　the　threshold　current　of　the　novel　structure　with　that　of　the　traditional　structure　at　the　same　reflectivity　and　output　power.　Finally,　we　prove　the　advantage　of　the　novel　structure　in　theory.　©　2001　IEEE.

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[ 1 ] [Zhu, W.]Beijing Optoelectronic Technology Laboratory, College of Electronic Information and Control Engineering, Beijing Polytechnic University, Beijing, 100022, China
[ 2 ] [Guo, X.]Beijing Optoelectronic Technology Laboratory, College of Electronic Information and Control Engineering, Beijing Polytechnic University, Beijing, 100022, China
[ 3 ] [Lian, P.]Beijing Optoelectronic Technology Laboratory, College of Electronic Information and Control Engineering, Beijing Polytechnic University, Beijing, 100022, China
[ 4 ] [Zou, D.]Beijing Optoelectronic Technology Laboratory, College of Electronic Information and Control Engineering, Beijing Polytechnic University, Beijing, 100022, China
[ 5 ] [Gao, G.]Beijing Optoelectronic Technology Laboratory, College of Electronic Information and Control Engineering, Beijing Polytechnic University, Beijing, 100022, China
[ 6 ] [Shen, G.]Beijing Optoelectronic Technology Laboratory, College of Electronic Information and Control Engineering, Beijing Polytechnic University, Beijing, 100022, China

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2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

Year： 2001

Volume： 2

Page： 1306-1309

Language： English

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 1

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信息学部

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