Cascaded coupled large optical cavity semiconductor lasers - 文章详情页

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Novel　multi-active　region　semiconductor　lasers　with　large　coupled　optical　cavity　and　high　quantum　efficiency　has　been　proposed　and　fabricated.　The　external　and　differential　quantum　efficiency　are　2.9　and　3.0　W/A,　and　the　output　light　power　is　∼5W　when　the　injecting　current　equals　2A　for　the　four　active　region　980　nm　strained　InGaAs/GaAs　QW　lasers.　The　fundamental　mode　light　output　with　perpendicular　angle　≤17°　for　this　type　of　large　coupled　optical　cavity　laser　has　been　achieved.　©　2001　IEEE.

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[ 1 ] [Cui, B.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China
[ 2 ] [Lian, P.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China
[ 3 ] [Yin, T.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China
[ 4 ] [Chen, C.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China
[ 5 ] [Li, J.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China
[ 6 ] [Gao, G.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China
[ 7 ] [Zhou, D.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China
[ 8 ] [Shen, G.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Optoelectronic Technology Laboratory, Beijing, 100022, China
[ 9 ] [Ma, X.]Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
[ 10 ] [Chen, L.]Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

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