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作者:

Guo, X. (Guo, X..) (学者:郭霞) | Wang, G.-H. (Wang, G.-H..) | Zhu, W.-J. (Zhu, W.-J..) | Du, J.-Y. (Du, J.-Y..) | Gao, G. (Gao, G..) | Zou, D.-S. (Zou, D.-S..) | Shen, G.-D. (Shen, G.-D..) | Ma, X.-Y. (Ma, X.-Y..) | Chen, L.-H. (Chen, L.-H..)

收录:

Scopus

摘要:

The problem of conventional light emitting diodes (LEDs) was analyzed. A novel tunnel-regenerated multiple-active-region light-emitting diode with high quantum efficiency and high brightness has been proposed and fabricated. We have proved theoretically that the efficiency of the electrical luminescence and the on-axis luminous intensity of such novel LEDs scaled linearly approximately with the number of the active regions. The on-axis luminous intensity of such novel LED with only 3 μm GaP current spreading layer has exceeded 5cd at 20 mA DC operation under 15° package. The ultrahigh quantum efficiency and ultrahigh brightness LED under the low injection level was realized. © 2001 IEEE.

关键词:

high brightness; LED; tunnel junction

作者机构:

  • [ 1 ] [Guo, X.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
  • [ 2 ] [Wang, G.-H.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
  • [ 3 ] [Zhu, W.-J.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
  • [ 4 ] [Du, J.-Y.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
  • [ 5 ] [Gao, G.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
  • [ 6 ] [Zou, D.-S.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
  • [ 7 ] [Shen, G.-D.]Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing Opto-electronic Technology Laboratory, Beijing, 100022, China
  • [ 8 ] [Ma, X.-Y.]Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
  • [ 9 ] [Chen, L.-H.]Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

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来源 :

2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

年份: 2001

卷: 2

页码: 1252-1254

语种: 英文

被引次数:

WoS核心集被引频次:

SCOPUS被引频次: 1

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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