In　this　study,　a　record　high　figure　of　merit　(ZT)　of　approximate　to　1.1　at　773　K　is　reported　in　n-type　highly　distorted　Sb-doped　SnSe　microplates　via　a　facile　solvothermal　method.　The　pellets　sintered　from　the　Sb-doped　SnSe　microplates　show　a　high　power　factor　of　approximate　to　2.4　mu　W　cm(-1)　K-2　and　an　ultralow　thermal　conductivity　of　approximate　to　0.17　W　m(-1)　K-1　at　773　K,　leading　a　record　high　ZT.　Such　a　high　power　factor　is　attributed　to　a　high　electron　concentration　of　3.94　x　10(19)　cm(-3)　via　Sb-enabled　electron　doping,　and　the　ultralow　thermal　conductivity　derives　from　the　enhanced　phonon　scattering　at　intensive　crystal　defects,　including　severe　lattice　distortions,　dislocations,　and　lattice　bent,　observed　by　detailed　structural　characterizations.　This　study　fills　in　the　gaps　of　fundamental　doping　mechanisms　of　Sb　in　SnSe　system,　and　provides　a　new　perspective　to　achieve　high　thermoelectric　performance　in　n-type　polycrystalline　SnSe.