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作者:

Sun, Dongsheng (Sun, Dongsheng.) | Li, Yonghe (Li, Yonghe.) | Cheng, Xiaopeng (Cheng, Xiaopeng.) | Shi, Huifeng (Shi, Huifeng.) | Jaffer, Saddique (Jaffer, Saddique.) | Wang, Kuan (Wang, Kuan.) | Liu, Xianqiang (Liu, Xianqiang.) | Lu, Junxia (Lu, Junxia.) | Zhang, Yuefei (Zhang, Yuefei.) (学者:张跃飞)

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EI Scopus SCIE

摘要:

The pseudocapacitive materials, like spinel NiCo2O4 (NCO), that use Faradaic reactions to store charge have been widespread paid attention for supercapacitors application. So, it is a basic fundamental guideline that the preparation of higher-performance pseudocapacitive materials depends on achieving and accelerating more Faradaic reactions in the aspect of electrodes. In this work, based on the mentioned principle, we report a facile method that could significantly promote the capacity of NiCo2O4 nanoelectrode through annealing precursor nanowires (NWs) in different volume ratios of N-2 and O-2 condition. The pristine NCO (V-N2: V-O2 = 0: 1) only exhibited inferior performance with a specific capacitance of 0.88 F cm(-2) (338.5 F g(-1) at 2mA cm(-2)) and capacitive retention of 54% from 2 to 30mA cm(-2). While, for a comparison, the highest comprehensive performance of NCO-9 (V-N2: V-O2 = 9: 1) electrodes delivered superior specific capacitance of 3.8 F cm(-2) (1461 F g(-1) at 2mA cm(-2)), excellent rate retention of 77% and good cycling stability. These boosted pseudocapacitive properties both in capacity and rate capability are attributed to the severe oxygen vacancy defects introduced in nitrided NCO NWs. The involving richness-enabled oxygen defects significantly enhance the electron/ions transportation, and then efficiently alter the well-known capacitive surfacial reaction into bulk pattern in the charge-discharge cycles. This dramatically increased electron/ions kinetics and electrochemical cites for Faradaic reactions. These results provide a deep insight into correlating oxygen vacancies induced structural and chemical evolution on enhanced capacitive performances of redox-active-NiCo2O4 materials. (C) 2018 Elsevier Ltd. All rights reserved.

关键词:

EELS NiCo2O4 Oxygen defects Supercapacitor Surface reaction

作者机构:

  • [ 1 ] [Sun, Dongsheng]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 2 ] [Li, Yonghe]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 3 ] [Cheng, Xiaopeng]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 4 ] [Shi, Huifeng]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 5 ] [Jaffer, Saddique]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 6 ] [Wang, Kuan]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 7 ] [Liu, Xianqiang]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 8 ] [Zhang, Yuefei]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 9 ] [Lu, Junxia]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China

通讯作者信息:

  • 张跃飞

    [Zhang, Yuefei]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China;;[Lu, Junxia]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China

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来源 :

ELECTROCHIMICA ACTA

ISSN: 0013-4686

年份: 2018

卷: 279

页码: 269-278

6 . 6 0 0

JCR@2022

ESI学科: CHEMISTRY;

ESI高被引阀值:98

JCR分区:1

被引次数:

WoS核心集被引频次: 49

SCOPUS被引频次: 51

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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