Electronic defects of boron-doped fullerene - 文章详情页

作者：

Zhang, X. (Zhang, X..) | Zou, Y. (Zou, Y..) | Song, X. (Song, X..) | Chen, G. (Chen, G..) (学者：陈戈) | Yan, H. (Yan, H..)

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Scopus

摘要：

The　ESR　characteristics　of　boron-doped　fullerene　prepared　by　arc　vaporization　of　B2O3　powder　and　graphite　in　a　helium　ambient　are　investigated　for　the　first　time.　It　is　found　that　the　obtained　ESR　spectrum　of　boron-doped　fullerene　is　attributed　to　two　components　with　the　same　g　value　of　around　2.0025.

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作者机构：

[ 1 ] [Zhang, X.]Department of Physics, Lanzhou University, Lanzhou 730000, China
[ 2 ] [Zou, Y.]Department of Applied Physics, Beijing Polytechnic University, Beijing 100022, China
[ 3 ] [Song, X.]Department of Applied Physics, Beijing Polytechnic University, Beijing 100022, China
[ 4 ] [Chen, G.]Department of Applied Physics, Beijing Polytechnic University, Beijing 100022, China
[ 5 ] [Yan, H.]Department of Applied Physics, Beijing Polytechnic University, Beijing 100022, China

通讯作者信息：

[Yan, H.]Department of Applied Physics, Beijing Polytechnic University, Beijing 100022, China

电子邮件地址：

hyan@solaris.bjpu.edu.cn

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