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Author:

Liu, Lang (Liu, Lang.) | Huang, Sheng (Huang, Sheng.) | Lu, Yue (Lu, Yue.) (Scholars:卢岳) | Liu, Pengfei (Liu, Pengfei.) | Zhao, Yizhou (Zhao, Yizhou.) | Shi, Congbo (Shi, Congbo.) | Zhang, Siyu (Zhang, Siyu.) | Wu, Jiafeng (Wu, Jiafeng.) | Zhong, Haizheng (Zhong, Haizheng.) | Sui, Manling (Sui, Manling.) (Scholars:隋曼龄) | Zhou, Huanping (Zhou, Huanping.) | Jin, Haibo (Jin, Haibo.) | Li, Yujing (Li, Yujing.) | Chen, Qi (Chen, Qi.)

Indexed by:

EI Scopus SCIE PubMed

Abstract:

The power conversion efficiency of organic-inorganic hybrid perovskite solar cells has increased rapidly, but the device stability remains a big challenge. Previous studies show the grain boundary (GB) can facilitate ion migration and initiate device degradation. Herein, methimazole (MMI) is employed for the first time to construct a surface patch by in situ converting residual PbI2 at GBs. The resultant MMI-PbI2 complex can effectively suppress ion migration and inhibit diffusion of the metal electrodes. The origin of the surface patch effect and their working mechanisms are investigated experimentally and theoretically at the microscopic level. It hence demonstrates a simple and effective method to prolong the device stability in the context of GB engineering, which could be extensively applied to perovskite-based optoelectronics.

Keyword:

patch methimazole grain-boundary engineering perovskite solar cells stability

Author Community:

  • [ 1 ] [Liu, Lang]Beijing Inst Technol, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
  • [ 2 ] [Huang, Sheng]Beijing Inst Technol, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
  • [ 3 ] [Liu, Pengfei]Beijing Inst Technol, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
  • [ 4 ] [Zhao, Yizhou]Beijing Inst Technol, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
  • [ 5 ] [Shi, Congbo]Beijing Inst Technol, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
  • [ 6 ] [Zhang, Siyu]Beijing Inst Technol, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
  • [ 7 ] [Wu, Jiafeng]Beijing Inst Technol, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
  • [ 8 ] [Zhong, Haizheng]Beijing Inst Technol, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
  • [ 9 ] [Jin, Haibo]Beijing Inst Technol, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
  • [ 10 ] [Li, Yujing]Beijing Inst Technol, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
  • [ 11 ] [Chen, Qi]Beijing Inst Technol, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
  • [ 12 ] [Lu, Yue]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 13 ] [Sui, Manling]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 14 ] [Zhou, Huanping]Peking Univ, Dept Mat Sci & Engn, Coll Engn, Beijing 100871, Peoples R China
  • [ 15 ] [Chen, Qi]Beijing Inst Technol, Adv Res Inst Multidisciplinary Sci, Beijing 100081, Peoples R China

Reprint Author's Address:

  • [Li, Yujing]Beijing Inst Technol, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Sch Mat Sci & Engn, Beijing 100081, Peoples R China;;[Chen, Qi]Beijing Inst Technol, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Sch Mat Sci & Engn, Beijing 100081, Peoples R China;;[Chen, Qi]Beijing Inst Technol, Adv Res Inst Multidisciplinary Sci, Beijing 100081, Peoples R China

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Source :

ADVANCED MATERIALS

ISSN: 0935-9648

Year: 2018

Issue: 29

Volume: 30

2 9 . 4 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:260

JCR Journal Grade:1

Cited Count:

WoS CC Cited Count: 247

SCOPUS Cited Count: 262

ESI Highly Cited Papers on the List: 14 Unfold All

  • 2022-9
  • 2022-7
  • 2022-5
  • 2022-3
  • 2022-3
  • 2022-3
  • 2021-9
  • 2021-7
  • 2021-5
  • 2021-3
  • 2021-1
  • 2020-11
  • 2020-5
  • 2020-3

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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