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High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cla...
Ma, "High performance 980 nm quantum well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers ...
文献获取High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers
The laser structure was grown by low-pressure metalorganic chemical vapor deposition on a n +-GaAs substrate. For 3 μm stripe ridge waveguide lasers, ...
Growth and fabrication of high-performance 980-nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP ...
The laser structure was grown by low-pressure metalorganic chemical vapor deposition, which exhibit a high internal quantum efficiency of similar to 90%...
Carbon-doped 980-nm InGaAs strained quantum well lasers grown by metalorganic chemical vapor deposition
Graded-index separate-confinement strained quantum well InGaAs/GaAs/GaAlAs lasers grown by metalorganic chemical- vapor deposition with carbon tetrachlo...
InGaAs/GaAs/InGaP Strained Quantum Well Lasers Grown by Metalorganic Chemical Vapor Deposition
杨国文,徐遵图,马晓宇,徐俊英,张敬明,陈良惠. InGaAs/GaAs/InGaP Strained Quantum Well Lasers Grown by Metalorganic Che-mical Vapor Deposition[J]. 1998...
InGaAs/GaAs/InGaP Strained Quantum Well Lasers Grown by Metalorganic Chemical Vapor Deposition
InGaAs/GaAs/InGaP Strained Quantum Well Lasers Grown by Metalorganic Chemical Vapor Depositiondoi:CNKI:SUN:BDTX.0.1998-07-012
Yang Guowen Xu Zuntu Ma Xiaoyu Xu Junying Zhang Jingming ChenLianghui (Institute of Semiconductors
，
TCAO Sciences
，
Beijing 100083)
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半导体学报
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被引量:
0
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1998年
Growth and fabrication of high-performance 980-nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP ...
The laser structure was grown by low-pressure metalorganic chemical vapor deposition, which exhibit a high internal quantum efficiency of approximately ...
High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cla...
We report on the material growth and fabrication of high-performance 980-nm strained quantum-well lasers employing a hybrid material system consisting o...
Wavelength-division multiplexed optical interconnects using monolithic wavelength-graded VCSEL and resonant photodetector arrays
LasersMetalorganic chemical vapor depositionMonolithic wavelength-graded vertical-cavity surface- emitting laser (VCSEL) and wavelength-selective resona...
In-Redistribution in a GaInN Quantum Well upon Thermal Annealing
A GaInN quantum-well structure with an average In-concentration of 16%, grown by metal organic chemical vapor deposition (MOCVD) on a SiC substrate, was...
