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作者:

Sargent, E.H. (Sargent, E.H..) | Tan, G.-L. (Tan, G.-L..) | Xu, J.M. (Xu, J.M..)

收录:

Scopus

摘要:

We. employ two-dimensional (2-D) self-consistent hysical modeling of a particularly promising lateral current injection laser reported recently in the literature to gain insight into the physical mechanisms governing the operation of this family of devices. We demonstrate the substantial benefits to be obtained from improved hole injection facilitated by relatively light p-type doping of barrier layers; from lateral shifting of the transverse junction to improve the overlap between the photon field and material gain; and from creating a lateral heterobarrier via quantum-well intermixing in order to confine carriers in the lateral direction. We find that with a number of relatively minor physically motivated modifications to existing fabrication processes, lateral injection lasers have the potential to exhibit greatly improved performance characteristics and to realize thereby their tremendous potential as enablers of optoelectronic integrated circuits and novel device structures.

关键词:

Charge carrier processes; Integrated optoelectronics; Modeling; Optoelectronic devices; Semiconductor lasers; Spontaneous emission; Stimulated emission

作者机构:

  • [ 1 ] [Sargent, E.H.]Dept. of Elec. and Comp. Engineering, University of Toronto, Toronto, Ont. M5S 1A4, Canada
  • [ 2 ] [Sargent, E.H.]Queen's University, Canada
  • [ 3 ] [Sargent, E.H.]Dept. of Elec. and Comp. Engineering, University of Toronto, Canada
  • [ 4 ] [Sargent, E.H.]Advanced Technology Laboratories, Bell-Northern Research, Canada
  • [ 5 ] [Tan, G.-L.]Dept. of Elec. and Comp. Engineering, University of Toronto, Toronto, Ont. M5S 1A4, Canada
  • [ 6 ] [Tan, G.-L.]Department of Engineering Physics, Qinghua University, China
  • [ 7 ] [Tan, G.-L.]Department of Electrical Engineering, Beijing Polytechnic University, Beijing, China
  • [ 8 ] [Tan, G.-L.]Dept. of Elec. Eng. and Comp. Sci., University of California, San Diego, San Diego, CA, United States
  • [ 9 ] [Tan, G.-L.]Department of Electrical Engineering, University of Toronto, Toronto, Ont., Canada
  • [ 10 ] [Xu, J.M.]IEEE
  • [ 11 ] [Xu, J.M.]Dept. of Elec. and Comp. Engineering, University of Toronto, Toronto, Ont. M5S 1A4, Canada
  • [ 12 ] [Xu, J.M.]University of Minnesota, Minneapolis, MN, United States
  • [ 13 ] [Xu, J.M.]Dept. of Elec. and Comp. Engineering, University of Toronto, Toronto, Ont., Canada
  • [ 14 ] [Xu, J.M.]Ontario Laser Lightwave Res. Ctr., Canada
  • [ 15 ] [Xu, J.M.]Ontario Centre for Material Research, Canada
  • [ 16 ] [Xu, J.M.]Info. Technology Research Centre
  • [ 17 ] [Xu, J.M.]Optoelectronics Laboratory, University of Toronto, Canada
  • [ 18 ] [Xu, J.M.]IEEE Electron Devices Soc. M., IEEE Electron Devices Soc. Admin. C.

通讯作者信息:

  • [Sargent, E.H.]Dept. of Elec. and Comp. Engineering, University of Toronto, Toronto, Ont. M5S 1A4, Canada

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来源 :

IEEE Journal on Selected Topics in Quantum Electronics

ISSN: 1077-260X

年份: 1997

期: 2

卷: 3

页码: 507-512

4 . 9 0 0

JCR@2022

ESI学科: ENGINEERING;

JCR分区:1

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 22

ESI高被引论文在榜: 0 展开所有

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