Accumulated　crystallization　characteristics　of　amorphous　Ge2Sb2Te5　(a-GST)　films　induced　by　multi-pulsed　laser　irradiations　with　different　fluences　were　investigated　by　x-ray　diffraction　(XRD),　Raman　spectroscopy　and　spectrophotometer.　Solid-state　transformation　was　performed　at　low　fluence　(LF,　30.5　mJ　cm(-2)),　whereas　melting-cooling　transformation　dominated　at　medium　and　high　fluence　(MF,　45.7　and　HF,　61　mJ　cm(-2)).　Solid-state　transformation　induced　by　subsequent　LF　pulses　promoted　the　growth　and　coalescence　of　grains,　linearly　increasing　the　average　grain　size,　accordingly　causing　blue-shifts　of　the　Raman　spectral　peaks.　For　MF/HF　pulse　irradiated　films,　the　relatively　high　laser　fluence　increased　the　melting　depth　and　reduced　the　volume　fraction　of　the　crystalline　state　induced　by　individual　pulses,　thereby　increasing　the　threshold　of　laser　pulse　numbers　for　XRD　detectable　crystallization.　However,　the　remelting　depth　induced　by　subsequent　MF/HF　laser　pulse　progressively　decreased.　The　remelting-recrystallization　process　refined　grain　sizes,　which　improved　the　red-shifts　of　Raman　spectral　peaks.　Moreover,　optical　contrast　increased　dramatically　compared　to　single　laser　irradiation　and　five-level　storage　could　be　realized　for　a　linear　increase　of　optical　contrast.　The　present　study　is　fundamental　for　realizing　the　potential　of　multi-level　devices.