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作者:

Wang, Denggui (Wang, Denggui.) | Meng, Junhua (Meng, Junhua.) (学者:孟军华) | Zhang, Xingwan (Zhang, Xingwan.) | Guo, Gencai (Guo, Gencai.) | Yin, Zhigang (Yin, Zhigang.) | Liu, Heng (Liu, Heng.) | Cheng, Likun (Cheng, Likun.) | Gao, Menglei (Gao, Menglei.) | You, Jingbi (You, Jingbi.) | Wang, Ruzhi (Wang, Ruzhi.) (学者:王如志)

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EI Scopus SCIE

摘要:

Hafnium disulfide (HfS2) has attracted significant interest because of the predicted excellent electronic properties superior to group VIB transition metal dichalcogenides. On the other hand, atomically thin hexagonal boron nitride (h-BN) is an ideal dielectric substrate for optoelectronic applications of other 2D materials. Here, for the first time, we report the direct growth of high-quality atomic layered HfS(2)on few-layer h-BN transferred on SiO2/Si substrates by chemical vapor deposition. It was found that the HfS(2)layers are selectively grown on h-BN rather than on SiO2/Si. Density functional theory calculations are performed to help understand the mechanism of selective growth of HfS2. Furthermore, the photodetectors based on the HfS2/h-BN heterostructures exhibit excellent visible-light sensing performance, such as a high on/off ratio of more than 10(5), an ultrafast response rate of about 200 mu s, a high responsivity of 26.5 mA W-1, and a competitive detectivity exceeding 3 x 10(11)Jones, superior to the vast majority of the reported 2D materials based photodetectors. The remarkable performance of the HfS2/h-BN photodetector is attributed to the unique features of 2D h-BN substrate.

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作者机构:

  • [ 1 ] [Wang, Denggui]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 2 ] [Meng, Junhua]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 3 ] [Zhang, Xingwan]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 4 ] [Yin, Zhigang]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 5 ] [Liu, Heng]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 6 ] [Cheng, Likun]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 7 ] [Gao, Menglei]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 8 ] [You, Jingbi]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 9 ] [Wang, Denggui]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 10 ] [Meng, Junhua]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 11 ] [Zhang, Xingwan]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 12 ] [Yin, Zhigang]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 13 ] [Liu, Heng]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 14 ] [Cheng, Likun]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 15 ] [Gao, Menglei]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 16 ] [You, Jingbi]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 17 ] [Guo, Gencai]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 18 ] [Wang, Ruzhi]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

通讯作者信息:

  • [Zhang, Xingwan]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China;;[Zhang, Xingwan]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China

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来源 :

CHEMISTRY OF MATERIALS

ISSN: 0897-4756

年份: 2018

期: 11

卷: 30

页码: 3819-3826

8 . 6 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:260

JCR分区:1

被引次数:

WoS核心集被引频次: 57

SCOPUS被引频次: 53

ESI高被引论文在榜: 0 展开所有

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