ZnO　has　attracted　considerable　attention　in　fundamental　studies　and　practical　applications　for　the　past　decade　due　to　its　outstanding　performance　in　gas　sensing,　photocatalytic　degradation,　light　harvesting,　UV-light　emitting/lasing,　etc.　The　large-sized　thin-walled　ZnO　(TW-ZnO)　microtube　with　stable　and　rich　V-zn　-　related　acceptors　grown　by　optical　vapor　supersaturated　precipitation　(OVSP)　is　a　novel　multifunctional　optoelectronic　material.　Unfortunately,　the　OVSP　cannot　achieve　doping　due　to　the　vapor　growth　process.　To　obtain　doped　TW-ZnO　microtubes,　a　solid　state　method　is　introduced　in　this　work　to　achieve　thin-walled　Al-doping　ZnO　(TW-ZnO:Al)　microtubes　with　high　electrical　conductivity.　The　morphology　and　microstructures　of　ZnO:Al　microtubes　are　similar　to　undoped　ones.　The　Al3+　ions　are　confirmed　to　substitute　Zn2+　sites　and　Zn(0/-1)　vacancies　in　the　lattice　of　ZnO　by　EDS,　XRD,　Raman　and　temperature-dependent　photoluminescence　analyses.　The　Al　dopant　acting　as　a　donor　level　offers　massive　free　electrons　to　increase　the　carrier　concentrations.　The　resistivity　of　the　ZnO:Al　microtube　is　reduced　down　to　similar　to　10(3)　Omega.cm,　which　is　one　order　of　magnitude　lower　than　that　of　the　undoped　microtube.　The　present　work　provides　a　simple　way　to　achieve　doped　ZnO　tubular　components　for　potential　device　applications　in　optoelectronics.　(C)　2018　Elsevier　B.V.　All　rights　reserved.