Using　HWA-MWECR-CVD　system　μc-Si;　H　thin　films　were　prepared.　The　influences　of　hydrogen　dilution　ratio,　reaction　pressure　and　microwave　power　on　the　amorphous　to　microcrystalline　phase　transition,　deposition　rate　and　photo-electronic　properties　of　thin　films　were　studied.　The　experimental　results　showed　that　under　the　conditions　of　94%　hydrogen　dilution　ratio,　1.5　Pa　reaction　pressure　and　500　W　microwave　power,　high-quality　μc-Si:H　thin　films　were　obtained,　such　as　high　photosensitivity　of　2.86　*　104,　high　deposition　rate　of　about　1　nm/s　and　low　light-induced　degradation　rate　of　8.9%,　etc.