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作者:

Wang, Shaojun (Wang, Shaojun.) | Jiang, Lan (Jiang, Lan.) | Han, Weina (Han, Weina.) | Hu, Jie (Hu, Jie.) | Li, Xiaowei (Li, Xiaowei.) | Wang, Qingsong (Wang, Qingsong.) | Lu, Yongfeng (Lu, Yongfeng.)

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摘要:

We realize hierarchical laser-induced periodic surface structures (LIPSSs) on the surface of a ZnO thin film in a single step by the irradiation of femtosecond laser pulses. The structures are characterized by the high-spatial-frequency LIPSSs (HSFLs) formed on the abnormal bumped low-spatial-frequency LIPSSs (LSFLs). Localized electric-field enhancement based on the initially formed LSFLs is proposed as a potential mechanism for the formation of HSFLs. The simulation results through the finite-difference time-domain method show good agreement with experiments. Furthermore, the crucial role of the LSFLs in the formation of HSFLs is validated by an elaborate experimental design with preprocessed HSFLs. (C) 2018 The Japan Society of Applied Physics

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作者机构:

  • [ 1 ] [Wang, Shaojun]Beijing Inst Technol, Sch Mech Engn, Laser Micro Nanofabricat Lab, Beijing 100081, Peoples R China
  • [ 2 ] [Jiang, Lan]Beijing Inst Technol, Sch Mech Engn, Laser Micro Nanofabricat Lab, Beijing 100081, Peoples R China
  • [ 3 ] [Hu, Jie]Beijing Inst Technol, Sch Mech Engn, Laser Micro Nanofabricat Lab, Beijing 100081, Peoples R China
  • [ 4 ] [Li, Xiaowei]Beijing Inst Technol, Sch Mech Engn, Laser Micro Nanofabricat Lab, Beijing 100081, Peoples R China
  • [ 5 ] [Wang, Qingsong]Beijing Inst Technol, Sch Mech Engn, Laser Micro Nanofabricat Lab, Beijing 100081, Peoples R China
  • [ 6 ] [Jiang, Lan]Tsinghua Univ, Dept Mech Engn, Laser Micro Nanofabricat Lab, Beijing 100084, Peoples R China
  • [ 7 ] [Han, Weina]Beijing Univ Technol, Beijing Engn Res Ctr Appl Laser Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 8 ] [Lu, Yongfeng]Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

通讯作者信息:

  • [Hu, Jie]Beijing Inst Technol, Sch Mech Engn, Laser Micro Nanofabricat Lab, Beijing 100081, Peoples R China

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来源 :

APPLIED PHYSICS EXPRESS

ISSN: 1882-0778

年份: 2018

期: 5

卷: 11

2 . 3 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:145

被引次数:

WoS核心集被引频次: 5

SCOPUS被引频次: 6

ESI高被引论文在榜: 0 展开所有

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