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作者:

Cui, B.-F. (Cui, B.-F..) | Huang, H.-J. (Huang, H.-J..) | Zhang, L. (Zhang, L..) | Zhang, N. (Zhang, N..) (学者:张楠) | Wang, Z.-Q. (Wang, Z.-Q..) | Shen, G.-D. (Shen, G.-D..)

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Scopus PKU CSCD

摘要:

For the 980 nm high-power laser diodes manufactured by Beijing Opto-electronic Technology Lab, the relation between the power conversion efficiency of the best operating point and the cavity length is analyzed. Experimental results show that the best output power increases while the power conversion efficiency decreases with the cavity length increasing. Analyses indicate that the defect power is the primary factor resulting in the decrease of photoelectric conversion efficiency and reducing the inner loss is most obvious way to improve the power efficiency of the best operating point.

关键词:

High power; Internal loss; Laser diode; Power conversion efficiency

作者机构:

  • [ 1 ] [Cui, B.-F.]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Huang, H.-J.]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Zhang, L.]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Zhang, N.]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Wang, Z.-Q.]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 6 ] [Shen, G.-D.]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

通讯作者信息:

  • [Cui, B.-F.]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

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来源 :

Semiconductor Optoelectronics

ISSN: 1001-5868

年份: 2009

期: 6

卷: 30

页码: 835-837,873

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