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Author:

Zhang, L. (Zhang, L..) | Cui, B.-F. (Cui, B.-F..) | Li, M. (Li, M..) (Scholars:栗觅) | Guo, W.-L. (Guo, W.-L..) | Wang, J.-J. (Wang, J.-J..) | Shen, G.-D. (Shen, G.-D..)

Indexed by:

Scopus PKU CSCD

Abstract:

A two-dimension thermal model is presented for laser diode bars and the transient temperature distribution is simulated and discussed. It is found that the transients display three time ranges with different temperature slopes: in the range before some ten microseconds, the temperature difference is small between the bars with different fill factors; in the range between some ten microseconds and some ten to hundred milliseconds, the temperature of bars with high fill factor increases rapidly; at some ten milliseconds, a steady-state thermal distribution is nearly reached for the bars bonded on the micro-channel heat sink. While a steady-state thermal distribution is reached at some hundred milliseconds for the bars bonded on the heat conducting sink. Temperature difference between the emitters appears earlier for the bars with high fill factor at the same injecting current.

Keyword:

Laser diode bars; Laser technique; Thermal characteristic; Transient temperature

Author Community:

  • [ 1 ] [Zhang, L.]Beijing Institute of Tracking and Telecommunication Technology, Beijing 100094, China
  • [ 2 ] [Cui, B.-F.]Opto-Electronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Li, M.]Beijing Institute of Tracking and Telecommunication Technology, Beijing 100094, China
  • [ 4 ] [Guo, W.-L.]Opto-Electronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Wang, J.-J.]Beijing Institute of Tracking and Telecommunication Technology, Beijing 100094, China
  • [ 6 ] [Shen, G.-D.]Opto-Electronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

Reprint Author's Address:

  • [Zhang, L.]Beijing Institute of Tracking and Telecommunication Technology, Beijing 100094, China

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Source :

Semiconductor Optoelectronics

ISSN: 1001-5868

Year: 2009

Issue: 4

Volume: 30

Page: 498-501

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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