The　femtosecond　laser　direct　writing　method　has　been　used　to　fabricate　the　single　crystal　lanthanum　hexaboride　(LaB6　)　field-emission　tip　arrays　(FEAs).　The　morphologies,　structure　phase,　and　field　emission　of　the　single　crystal　LaB6　FEAs　are　systematically　studied.　The　nanostructures　on　the　surface　of　tips　with　the　LaB6　phase　were　formed,　resulting　in　favor　of　improving　field　emission,　particularly　for　samples　with　the　nanohill　shaped　bulges　having　the　size　of　about　100　nm.　The　produced　single　crystal　LaB6　FEAs　have　a　uniform　structure　and　a　controllable　curvature　radius　of　about　0.5-3.0　mu　m.　The　FEAs　with　a　curvature　radius　of　about　0.5　mu　m　as　field　emitters　have　the　best　field　emission　performance,　which　the　field　emission　turns　on　and　the　threshold　electric　fields　are　as　low　as　2.2　and　3.8　V/mu　m　with　an　emission　current　of　1.0　A/cm(2)　at　8.0　mu　m,　and　the　emission　current　exhibits　high　stability.　These　indicate　that　the　processed　LaB6　FEAs　have　a　good　prospect　applied　in　vacuum　microelectronic　devices　and　the　simple　femtosecond　laser　direct　writing　method　could　lead　to　an　approach　for　the　development　of　electron　sources.　Published　by　AIP　Publishing.